JPH036667B2 - - Google Patents

Info

Publication number
JPH036667B2
JPH036667B2 JP56104865A JP10486581A JPH036667B2 JP H036667 B2 JPH036667 B2 JP H036667B2 JP 56104865 A JP56104865 A JP 56104865A JP 10486581 A JP10486581 A JP 10486581A JP H036667 B2 JPH036667 B2 JP H036667B2
Authority
JP
Japan
Prior art keywords
channel mos
cmos
wiring
basic cell
lsi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56104865A
Other languages
English (en)
Japanese (ja)
Other versions
JPS586157A (ja
Inventor
Hideki Fukuda
Katsuji Horiguchi
Tsunetaka Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56104865A priority Critical patent/JPS586157A/ja
Publication of JPS586157A publication Critical patent/JPS586157A/ja
Publication of JPH036667B2 publication Critical patent/JPH036667B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP56104865A 1981-07-03 1981-07-03 Ｃｍｏｓマスタ・スライスｌｓｉ Granted JPS586157A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56104865A JPS586157A (ja) 1981-07-03 1981-07-03 Ｃｍｏｓマスタ・スライスｌｓｉ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56104865A JPS586157A (ja) 1981-07-03 1981-07-03 Ｃｍｏｓマスタ・スライスｌｓｉ

Publications (2)

Publication Number Publication Date
JPS586157A JPS586157A (ja) 1983-01-13
JPH036667B2 true JPH036667B2 (en]) 1991-01-30

Family

ID=14392126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56104865A Granted JPS586157A (ja) 1981-07-03 1981-07-03 Ｃｍｏｓマスタ・スライスｌｓｉ

Country Status (1)

Country Link
JP (1) JPS586157A (en])

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119647A (ja) * 1982-01-09 1983-07-16 Ricoh Co Ltd Ｌｓｉマスタスライスチツプ
JPS58142545A (ja) * 1982-02-18 1983-08-24 Mitsubishi Electric Corp マスタスライス方式ゲ−トアレイ形半導体集積回路装置
JPS59232442A (ja) * 1983-06-16 1984-12-27 Toshiba Corp 半導体集積回路
DE3332965A1 (de) * 1983-09-13 1985-03-28 Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe Festkoerperdosimeter
JPS614987A (ja) * 1984-06-20 1986-01-10 Toshiba Glass Co Ltd 螢光ガラス線量計
JPS614988A (ja) * 1984-06-20 1986-01-10 Toshiba Glass Co Ltd 螢光ガラス線量計
JP2677272B2 (ja) * 1988-09-01 1997-11-17 富士通株式会社 半導体集積回路装置
JPH0528056U (ja) * 1991-09-13 1993-04-09 ソニー株式会社 半導体装置

Also Published As

Publication number Publication date
JPS586157A (ja) 1983-01-13

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